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Nature of the electronic states involved in the chemical bonding and superconductivity at high pressure in SnO

机译:涉及化学键合和电子态的性质   snO中高压下的超导性

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摘要

We have investigated the electronic structure and the Fermi surface of SnOusing density functional theory (DFT) calculations within recently proposedexchange-correlation potential (PBE+mBJ) at ambient conditions and highpressures up to 19.3 GPa where superconductivity was observed. It was foundthat the Sn valence states 5s, 5p, and 5d are strongly hybridized with the O2p-states, and that our DFT-calculations are in good agreement with O K-edgeX-ray spectroscopy measurements for both occupied and empty states. It wasdemonstrated that the metallic states appearing under pressure in thesemiconducting gap stem due to the transformation of the weakly hybridized O2p-Sn 5sp subband corresponding to the lowest valence state of Sn in SnO. Wediscuss the nature of the electronic states involved in chemical bonding andformation of the hole and electron pockets with nesting as a possible way tosuperconductivity.
机译:我们已经研究了SnOusing密度泛函理论(DFT)的电子结构和费米表面,并在最近提出的交换相关电位(PBE + mBJ)的环境条件和高达19.3 GPa的高压下观察到了超导电性。发现Sn价态5s,5p和5d与O2p态高度杂交,并且我们的DFT计算与在占据和空态下的O K-edgeX射线光谱测量结果都非常吻合。证明了在这些导通间隙中在压力下出现的金属态是由于弱杂交的O2p-Sn 5sp子带的转变所引起的,对应于SnO中最低的Sn价态。我们讨论了与空穴和电子口袋化学键合和形成有关的电子态的性质,其中嵌套是实现超导的一种可能方法。

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